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AG Weiss

Forschung

We explore charge and spin transport in reduced dimensions like in two-dimensional electron systems, in graphene but also in the surface states of topological insulators. Recent work includes the exploration of classical and quantum magnetotransport effects in strained bulk HgTe, a 3D topological insulator [1], the probing of lateral superlattice effects in nanopatterned graphene [2], the observation of the fractional quantum Hall effect in a diluted magnetic semiconductor [3], the examination of electrical and optical spin injection into GaAs [4,5] and graphene [6], the direct electrical measurement of the spin-Hall effect in GaAs [7], or the realization of a new spin transistor concept based on a two-dimensional electron gas in a magnetic (Cd,Mn)Te quantum well [8].


[1] D.A. Kozlov, Z.D. Kvon, E.B. Olshanetsky, N.N. Mikhailov, S.A. Dvoretsky, D. Weiss Phys. Rev. Lett. 112, 196801 (2014) Transport Properties of a 3D Topological Insulator based on a Strained High-Mobility HgTe Film

[2]M. Drienovsky, F.X. Schrettenbrunner, A. Sandner, D. Weiss, J. Eroms, M.-H. Liu, F. Tkatschenko, K. Richter, Phys. Rev. B 89, 115421 (2014), Towards superlattices: Lateral bipolar multibarriers in graphene

[3]C. Betthausen, P. Giudici, A. Iankilevitch, C. Preis, V. Kolkovsky, M. Wiater, G. Karcezwski, B.A. Piot, J. Kunc, M. Potemski, T. Wojotowicz, D. Weiss, Phys. Rev. B 90, 115302 (2014), Fractional quantum Hall effect in a dilute magnetic semiconductor

[4]J. Shiogai, M. Ciorga, M. Utz, D. Schuh, M. Kohda, D. Bougeard, T. Nojima, J. Nitta, D. Weiss, Giant enhancement of spin detection sensitivity in (Ga,Mn)As/GaAs Esaki diodes, Phys. Rev. B 89, 081307 (2014)

[5]B. Endres, M. Ciorga, M. Schmid, M. Utz, D. Bougeard, D. Weiss, G. Bayreuther, C.H. Back, Nature Communications 4, 2068 (2013), Demonstration of the spin solar cell and spin photodiode effect

[6]B. Birkner, D. Pachniowski, S. Sandner, M. Ostler, T. Seyller, J. Fabian, M. Ciorga, D. Weiss, J. Eroms Phys. Rev. B 87, 81405 (2013), Annealing-induced magnetic moments detected by spin precession measurements in epitaxial graphene on SiC

[7]M. Ehlert, C. Song, M. Ciorga, M. Utz, D. Schuh, D. Bougeard, D. Weiss, Phys. Rev. B 86, 205204 (2012), All-electrical measurements of direct spin Hall effect in GaAs with Esaki diode electrodes

[8]C. Betthausen, T. Dollinger, H. Saarikoski, V. Kolkovsky, G. Karczewski, T. Wojtowicz, K. Richter, D. Weiss, Science 337, 324 (2012), Spin-Transistor Action via Tunable Landau-Zener Transitions


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